https://publications-cnrc.canada.ca/fra/voir/objet/?id=604823cd-6a76-4b6d-b44c-94c6ce8af53a
Semiconductor Science and Technology, IOP, 26 mars 2021, Volume : 36, Numéro : 5
In this paper, we report the fabrication of a normally-off AlGaN/GaN high electron mobility transistor (HEMT) using an ultra-thin AlGaN barrier layer structure...
Article de périodique (revue)