The results of pulsed laser ablation are reviewed with a focus on the feasibility of this approach for atomic level processing. We have developed a pulsed...
Journal of Applied Physics, AIP, 26 octobre 2009, Volume : 106, Numéro : 8
The dynamics of hexadecanethiol (HDT) [HS(CH2)15CH3] chemisorption and the formation of a self-assembled monolayer (SAM) on the GaAs(001) surface was studied...
Advanced laser processing of materials: fundamentals and applications: symposium held November 27-30, Cambridge University Press, 1996
Laser-assisted dry etching ablation (LADEA) has been reviewed with an emphasis on its applicability for the microstructuring of III-V semiconductor compounds....
Photon Processing in Microelectronics and Photonics, SPIE, 18 juin 2002
Photoluminescence analysis has been implemented to investigate the crystalline properties of Gallium Nitride layers ablated with an XeCl excimer laser. The...
Journal of Vacuum Science and Technology A, 2004, Volume : 22, Numéro : 3
Selective area laser annealing of GaAs/AlxGa1−xAs quantum well infrared photodetector (QWIP) material has been investigated as a possible route towards the...
An XeCl excimer laser has been used to ablate InP in a Cl2/He environment. The chlorination of the surface of InP has been carried out at pressures of the...