https://publications-cnrc.canada.ca/fra/voir/objet/?id=174127f5-2ab9-4d06-93dd-c81f179f2b06
Journal Of Applied Physics, 1994, Volume : 76, Numéro : 4
The switching behavior of a composite-collector InP/InGaAs heterojunction bipolar transistor is found to be hysteretic at temperatures below 200 K. This arises...
Article de périodique (revue)