https://catalogue-scientifique.canada.ca/record=2186606~S6*frc
Rechercher Cooper, James A; Rechercher Capano, Michael A; Rechercher Feldman, Leonard C; Rechercher Skowronski, Marek; Rechercher Williams, John R
purdue univ lafayette in, 2007
In this work we developed the technology for 20 kV insulated gate bipolar transistors (IGBTs) in 4H-SiC. The p-channel IGBT is formed on a 175-micron p-type...
Publication gouvernementale