We report on the use of InAlAs linearly graded buffer layers for improving the performance of In(sub y)Ga(sub 1-y)As(y>0.42)/0.42)/AlGaAs intersubband...
A new kind of modulating retro-reflector using cat's eye optics and a multiple quantum well electro-absorption modulator array is described. The device...
In this paper, we report the results of a recent demonstration in which a Multiple Quantum Well retromodulator array was used as a low power, lightweight means...
This paper describes a recent demonstration of an optical data link between a small rotary-wing unmanned airborne vehicle (UAV) and a ground based laser...
Photoionization spectroscopy has been carried out in bias-stressed AlGaN=GaN high electron mobility transistors (HEMTs) grown by Molecular Beam Epitaxy (MBE)...
naval research lab washington dc electronics science and technology div, 2000
In this work we compare the effect of the buffer layer on the device quality and surface morphology of strained InGaAs/AlGaAs PIN multiple quantum well (MQW)...
In this work we compare the effect of the buffer layer on the device quality and surface morphology of strained InGaAs/AlGaAs PIN multiple quantum well (MQW)...
michigan univ ann arbor harrison m randall lab of physics, 1998
Coherent nonlinear optical spectroscopy of individual excitons in GaAs quantum dots is demonstrated and shows strong similarities with atoms in their coherent...
Current collapse is observed to be induced in AlGaN/GaN high-electron-mobility transistors as a result of short-term bias stress. This effect was seen in...
naval research lab washington dc optical sciences div, 2003
A modulating retroreflector (MRR) is used for a free-space optics (FSO) implementation of the MIL-STD-1553 protocol. A multiple quantum well (MQW) p-i-n...
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