We present a theory of electronic properties of HgTe quantum dot and propose a strain sensor based on a strain-driven transition from a HgTe quantum dot with...
Journal of Applied Physics, AIP Publishing, 7 avril 2022, Volume : 131, Numéro : 13
The choice of substrate orientation for semiconductor quantum dot circuits offers opportunities for tailoring spintronic properties such as g-factors for...
Applied Physics Letters, American Institute of Physics, 24 mai 2021, Volume : 118, Numéro : 21
We report a detailed study of the tunnel barriers within a single-hole GaAs/AlGaAs double quantum dot device (DQD). For quantum information applications as...
The manipulation of a nuclear spin by an electron spin requires the energy to flip the electron spin to be vanishingly small. This can be realized in a many...
We study experimentally and theoretically excitonic recombination processes in CdTe/ZnTe quantum dots. The single quantum dot photoluminescence spectrum was...
Physical Review Letters, American Physical Society, 8 février 2017, Volume : 118, Numéro : 6
Manipulating qubits via electrical pulses in a piezoelectric material such as GaAs can be expected to generate incidental acoustic phonons. In this Letter we...
We present a microscopic theory of the magnetic field dependence of the optical properties of II-VI semiconductor quantum dots containing a single magnetic...
Physical Review Letters, American Physical Society, 21 avril 2017, Volume : 118, Numéro : 16
Hole transport experiments were performed on a gated double quantum dot device defined in a p-GaAs/AlGaAs heterostructure with a single hole occupancy in each...
Materials often exhibit fundamentally new phenomena in reduced dimensions that potentially lead to novel applications. This is true for single-layer,...
To create carbon-based nanoscale integrated electronic, photonic, and spintronic circuit one must demonstrate the three functionalities in a single material,...
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