https://publications-cnrc.canada.ca/fra/voir/objet/?id=e85eb327-4cc3-4664-a184-29c5762a5c75
Rechercher Rajesh, K; Rechercher Huang, L. J; Rechercher Lau, W. M; Rechercher Bruce, R; Rechercher Ingrey, S; Rechercher Landheer, D
Journal of Applied Physics, 1997, Volume : 81, Numéro : 7
The quaternary III–V compound semiconductor GaInAsP is an important material for many optoelectronic devices, the surface of which generally needs to be...
Article de périodique (revue)