https://catalogue-scientifique.canada.ca/record=2173250~S6*frc
Rechercher Vetury, R; Rechercher Shealy, J. B; Rechercher Green, D. S; Rechercher McKenna, J; Rechercher Brown, J. D; Rechercher Leverich, K; Rechercher Garber, P. M; Rechercher Poulton, M. J
rfmd infrastructure product group inc charlotte nc, 2006
AlGaN/GaN HEMTs on SiC have been fabricated with dual and single gate device geometries. Sub-threshold characteristics and drain bias dependence of large...
Publication gouvernementale