Three generations of dual-gate AlGaN/GaN HEMTs on sapphire were fabricated and characterized. First generation dual-gate HEMT had equal gate lengths of 650 nm...
This program supported the development of metamorphic heterojunction bipolar transistors (MHBTs). We accomplished this by growing an InP based HBT layer...
california univ santa barbara dept of electrical and computer engineering, 2001
The program supported the development of high bandwidth heterojunction bipolar transistors (HBTs) for use in ultra-high frequency radar and communication...
california univ santa barbara dept of electrical and computer engineering, 2000
Scaling of HBTs for high circuit bandwidth and high current gain (f (sub tau)) and power gain (f max) cutoff frequencies is summarized. Key bandwidth limits...