https://publications-cnrc.canada.ca/fra/voir/objet/?id=9ea70817-512b-4462-9dc6-9f79461dcfa2
Applied Surface Science, 15 mars 2006, Volume : 252, Numéro : 10
Si K-edge XAFS was used to characterize a stoichiometric SiC film prepared by pulsed KrF laser deposition. The film was deposited on a p-type Si(1 0 0) wafer...
Article de périodique (revue)