https://publications-cnrc.canada.ca/fra/voir/objet/?id=8a3f89c2-f1fa-431b-a03c-8196002c89ed
Rechercher Lu, Z. H; Rechercher Graham, M. J; Rechercher Tay, S. P; Rechercher Jiang, D. T; Rechercher Tan, K. H
Papers from the 22nd Annual Conference on the Physics and Chemistry of Semiconductor Interfaces, American Institute of Physics, 1995
Synchrotron radiation photoemission spectroscopy (PES) has been used to study thermal SiO2/Si(100) interfaces. Oxides were grown at 700, 800, 900, and 1000 °C...
Article de périodique (revue)